Occasion spotlights next-generation reminiscence options for functions equivalent to cloud, edge units and automotive autos
New applied sciences and merchandise embrace HBM3E Shinebolt, LPDDR5X CAMM2 and Removable AutoSSD to speed up innovation for future computing necessities
Samsung Electronics, a world chief in superior reminiscence know-how, at this time held its annual Reminiscence Tech Dayshowcasing industry-first improvements and new reminiscence merchandise to speed up technological developments throughout future functions — together with the cloud, edge units and automotive autos.
Attended by about 600 prospects, companions and {industry} specialists, the occasion served as a platform for Samsung executives to develop on the corporate’s imaginative and prescient for “Reminiscence Reimagined,” protecting long-term plans to proceed its reminiscence know-how management, outlook on market tendencies and sustainability targets. The corporate additionally offered new product improvements such because the HBM3E Shinebolt, LPDDR5X CAMM2 and Removable AutoSSD.
Jung-Bae Lee, President and Head of Reminiscence Enterprise at Samsung Electronics, used his keynote deal with to develop on how Samsung will overcome the challenges of the hyperscale period by improvements in new transistor buildings and supplies. For instance, Samsung is at the moment getting ready new 3D buildings for sub-10-nanometer (nm) DRAM, permitting bigger single-chip capacities that may exceed 100 gigabits (Gb). Following its 12nm-class DRAM that started mass manufacturing in Could, 2023, Samsung is engaged on its next-generation 11nm-class DRAM, which is about to supply the {industry}’s highest density.
NAND flash breakthroughs that can shrink cell sizes and refine channel gap etching methods are additionally in improvement, with the aim of ushering in 1,000-layer vertical NAND (V-NAND). Improvement is on observe for Samsung’s ninth-generation V-NAND to supply the {industry}’s highest layer rely primarily based on a double-stack construction. The corporate has secured a useful chip for the brand new V-NAND and plans to begin mass manufacturing early subsequent 12 months.
“The brand new period of hyperscale AI has introduced the {industry} to a crossroads the place innovation and alternative intersect, presenting a time with potential for excellent leaps ahead, regardless of the challenges,” stated Lee. “Via infinite creativeness and relentless perseverance, we are going to proceed our market management by driving innovation and collaborating with prospects and companions to ship options that develop potentialities.”
Introducing HBM3E ‘Shinebolt’
Right now’s cloud techniques are evolving to optimize compute assets, which require high-performance reminiscence to deal with excessive capability, bandwidth and digital storage capabilities. Constructing on Samsung’s experience in commercializing the {industry}’s first HBM2 and opening the HBM marketplace for high-performance computing (HPC) in 2016, the corporate at this time revealed its next-generation HBM3E DRAM, named Shinebolt.
Samsung’s Shinebolt will energy next-generation AI functions, bettering whole value of possession (TCO) and dashing up AI-model coaching and inference within the knowledge heart. The HBM3E boasts a formidable pace of 9.8 gigabits-per-second (Gbps) per pin pace, that means it will probably obtain switch charges exceeding as much as greater than 1.2 terabytes-per-second (TBps).
With a purpose to allow increased layer stacks and enhance thermal traits, Samsung has optimized its non-conductive movie (NCF) know-how to remove gaps between chip layers and maximize thermal conductivity.
Samsung’s 8H and 12H HBM3 merchandise are at the moment in mass manufacturing and samples for Shinebolt are delivery to prospects. Leaning into its energy as a complete semiconductor options supplier, the corporate additionally plans to supply a customized turnkey service that mixes next-generation HBM, superior packaging applied sciences and foundry choices collectively.
Different merchandise highlighted on the occasion embrace the 32Gb DDR5 DRAM with the {industry}’s highest capability, the {industry}’s first 32Gbps GDDR7 and the petabyte-scale PBSSD, which gives a big increase to storage capabilities for server functions.
Redefining Edge Units Via Highly effective Kind Components
With a purpose to course of data-intensive duties, at this time’s AI applied sciences are shifting towards a hybrid mannequin that allocates and distributes workload amongst cloud and edge units. Accordingly, Samsung launched a spread of reminiscence options that assist high-performance, high-capacity, low-power and small kind components on the edge.
Along with the {industry}’s first 7.5Gbps LPDDR5X CAMM21 — which is anticipated to be a real sport changer within the next-generation PC and laptop computer DRAM market — the corporate additionally showcased its 9.6Gbps LPDDR5X DRAM, LLW2 DRAM specialised for on-device AI, next-generation Common Flash Storage (UFS), and the high-capacity Quad-Stage Cell (QLC) SSD BM9C1 for PCs.
Paving the Highway for Automotive Reminiscence Options Management
With developments in autonomous driving options, market demand can be rising for high-bandwidth, high-capacity DRAM and Shared SSDs, which share knowledge with a number of System on Chips (SoCs). Samsung offered its Removable AutoSSD that enables knowledge entry from a single SSD to a number of SoCs by digital storage.
The Removable AutoSSD helps sequential learn pace of as much as 6,500 megabytes-per-second (MBps) with 4TB of capability. Because it is available in a removable kind issue, the SSD makes upgrades and changes simpler for car customers and producers. Samsung additionally displayed automotive reminiscence options equivalent to high-bandwidth GDDR7 and LPDDR5X with a extra compact bundle measurement.
Know-how That Makes Know-how Sustainable
As a part of its dedication to minimizing environmental affect, Samsung underscored quite a lot of improvements inside its semiconductor operations that can contribute to elevated power effectivity for patrons and customers.
The corporate plans to safe ultra-low-power reminiscence applied sciences that may lower energy consumption in knowledge facilities, PCs and cellular units, whereas utilizing recycled supplies in moveable SSD merchandise to scale back its carbon footprint. Samsung’s next-generation options, such because the PBSSD, can even assist cut back power utilization for server techniques as they maximize area effectivity and rack capability.
Whereas collaborating with stakeholders throughout the semiconductor worth chain, together with prospects and companions, Samsung’s semiconductor enterprise will proceed to play an energetic position in tackling international local weather points by its sustainability initiative, “know-how that makes know-how sustainable.”
To study extra about Samsung Semiconductor’s options and Samsung Reminiscence Tech Day 2023, please go to: https://semiconductor.samsung.com/occasions/techday-memory-2023/. The recap of the occasion will probably be posted at a later date.
1 CAMM: Compression Hooked up Reminiscence Module.
2 LLW: Low Latency Large I/O.
